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參數(shù)資料
| 型號(hào)： | 2SK3110-AZ |
| 元件分類： | JFETs |
| 英文描述： | 14 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 72K |
| 代理商： | 2SK3110-AZ |
1998,1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3110
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13333EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP (K)
Printed in Japan
DATA SHEET
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3110 is N channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
FEATURES
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 180 m
MAX. (VGS = 10 V, ID = 7.0 A)
Low input capacitance
Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)
Built-in gate protection diode
Avalanche capability rated
Isolated TO-220 package
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
200
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current(DC) (TC = 25°C)
ID(DC)
±14
A
Drain Current(pulse)
Note1
ID(pulse)
±42
A
Total Power Dissipation (TA = 25°C)
PT1
2.0
W
Total Power Dissipation (TC = 25°C)
PT2
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
14
A
Single Avalanche Energy
Note2
EAS
98
mJ
Note1. PW
≤ 10
s, Duty Cycle ≤ 1 %
2. Starting Tch = 25°C, VDD = 100 V, RG = 25
, VGS = 20 V→0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3110
Isolated TO-220
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3111-S | 20 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3112-AZ | 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3113B-ZK-E2-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3113 | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3114B-S17-AY | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3111 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3111-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 20A 180m@10V TO220AB Bulk |
| 2SK3111-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3111-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3112 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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