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參數(shù)資料
型號: 2SK3112-ZJ
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
中文描述: 開關(guān)N溝道功率MOSFET的工業(yè)用
文件頁數(shù): 1/8頁
文件大小: 79K
代理商: 2SK3112-ZJ
1998,2001
MOS FIELD EFFECT TRANSISTOR
2SK3112
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13335EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP (K)
Printed in Japan
DATA SHEET
DESCRIPTION
The 2SK3112 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
FEATURES
Gate voltage rating ±30 V
Low on-state resistance
R
DS(on)
= 110 m
MAX. (V
GS
= 10 V, I
D
= 13 A)
Low input capacitance
C
iss
= 1600 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
200
±
30
±
25
±
75
100
1.5
150
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
55 to +150
25
250
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 100 V, R
G
= 25
, V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3112
TO-220AB
2SK3112-S
TO-262
2SK3112-ZJ
TO-263(MP-25ZJ)
(TO-220AB)
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3113 制造商:Renesas Electronics Corporation 功能描述:
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2SK3113B-S15 制造商:Renesas Electronics Corporation 功能描述:
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