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MOS FIELD EFFECT TRANSISTOR
2SK3113
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D13336EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
1998, 2001
The mark
shows major revised points.
DESCRIPTION
The 2SK3113 is N-channel DMOS FET device that features
a low gate charge and excellent switching characteristic, and
designed for high voltage applications such as switching
power supply, AC adapter.
FEATURES
Low on-state resistance
R
DS(on)
= 4.4
MAX. (V
GS
= 10
V, I
D
= 1.0
A)
Low gate charge
Q
G
= 9 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 2.0 A)
Gate voltage rating
±
30 V
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
30
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±
2.0
A
I
D(pulse)
±
8.0
A
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Note2
P
T1
20
W
P
T2
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
–55 to +150
°C
I
AS
2.0
A
E
AS
2.7
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm
3.
Starting T
ch
= 25°C, V
DD
= 150 V
,
R
G
= 25
,
V
GS
= 20
→
0 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3113
TO-251 (MP-3)
2SK3113-Z
TO-252 (MP-3Z)