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參數(shù)資料
| 型號(hào)： | 2SK3116-S |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | 開(kāi)關(guān)N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 70K |
| 代理商： | 2SK3116-S |
1998
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D13339EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP (K)
Printed in Japan
DATA SHEET
The mark
#
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
Q
G
= 26 nC TYP. (I
D
= 7.5 A, V
DD
= 450 V, V
GS
= 10 V)
Gate voltage rating
±
30 V
Low on-state resistance
R
DS(on)
= 1.2
MAX. (V
GS
= 10 V, I
D
= 3.75 A)
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
30
V
Drain Current (DC)
I
D(DC)
±
7.5
A
Drain Current (pulse)
Note1
I
D(pulse)
±
30
A
Total Power Dissipation (T
A
= 25°C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25°C)
P
T2
70
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Single Avalanche Current
Note2
I
AS
7.5
A
Single Avalanche Energy
Note2
E
AS
37.5
mJ
Diode Recovery dv/dt
Note3
dv/dt
3.5
V/ns
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
, V
GS
= 20
→
0 V
3.
I
F
≤
3.0 A, V
clamp
= 600 V, di/dt
≤
100 A/
μ
s, T
A
= 25°C
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3116
TO-220AB
2SK3116-S
TO-262
2SK3116-ZJ
TO-263
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3116-ZJ | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK311 | SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK310 | SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK3150L | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3150 | Silicon N Channel MOS FET(N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3116-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) TO-263 |
| 2SK3116-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3117 | 功能描述:MOSFET N-CH 500V 20A TO-3PSM RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3117_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3119 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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