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參數資料
| 型號： | 2SK3114 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 中文描述： | 開關N溝道功率MOSFET的工業用 |
| 文件頁數： | 6/8頁 |
| 文件大小： | 92K |
| 代理商： | 2SK3114 |
Data Sheet D13337EJ2V0DS
6
2SK3114
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
m
1m
10m
100
L - Inductive Load - H
I
A
1.0
10
0.1
10
m
R
G
= 25
W
V
DD
= 150 V
V
GS
= 20
0 V
Starting T
ch
= 25
C
E
AS
= 10.7 mJ
I
AS
= 4 A
PACKAGE DRAWINGS (Unit: mm)
Isolated TO-220 (MP-45F)
1.Gate
2.Drain
3.Source
10.0±0.3
3.2±0.2
φ
1
3
1
1
4
0.7±0.1
1.3±0.2
1.5±0.2
2.54 TYP.
2.54 TYP.
1 2 3
2.5±0.1
0.65±0.1
4.5±0.2
2.7±0.2
SINGLE AVALANCHE ENERGY
DERATING FACTOR
75
150
125
120
80
40
0
25
Starting T
ch
- Starting Channel Temperature -
C
E
50
100
V
DD
=
150
V
R
G
=
25
W
V
GS
=
20
0
V
I
AS
￡
4
A
100
60
20
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
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| 2SK3115 | Switching N-channel power MOS FET industrial use |
| 2SK3116 | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-S | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-ZJ | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK311 | SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3114-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 4A 2200m@10V IsolatedTO220 Bulk |
| 2SK3115 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SK3115-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk |
| 2SK3116 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
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