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參數資料
| 型號： | 2SK3116B-S19-AY |
| 元件分類： | JFETs |
| 英文描述： | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, MP-25, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 199K |
| 代理商： | 2SK3116B-S19-AY |
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MOS FIELD EFFECT TRANSISTOR
2SK3116B
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D18068EJ2V0DS00 (2nd edition)
Date Published August 2006 NS CP (K)
Printed in Japan
DATA SHEET
2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK3116B is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
QG = 22 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V)
Gate voltage rating : ±30 V
Low on-state resistance
RDS(on) = 1.2
Ω MAX. (VGS = 10 V, ID = 3.75 A)
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC)
ID(DC)
±7.5
A
Drain Current (pulse)
Note1
ID(pulse)
±30
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
70
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
7.5
A
Single Avalanche Energy
Note2
EAS
37.5
mJ
Diode Recovery dv/dt
Note3
dv/dt
3.5
V/ns
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25
Ω , VGS = 20 → 0 V
3. IF
≤ 3.0 A, Vclamp = 600 V, di/dt ≤ 100 A/
μs, TA = 25°C
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3116B-S19-AY
Note
TO-220AB(MP-25)
2SK3116B-ZK-E1-AY
Note
TO-263(MP-25ZK)
Note Pb-free (This product dose not contain Pb in
External electrode.)
(TO-263)
(TO-220AB)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3116 | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3116-ZJ | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3120 | 2 A, 30 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3127(2-10S2B) | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3127(2-10S1B) | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3116-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) TO-263 |
| 2SK3116-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3117 | 功能描述:MOSFET N-CH 500V 20A TO-3PSM RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3117_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
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