欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SK3124
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon N-Channel Power F-MOS FET
中文描述: 500 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: U-TYPE PACKAGE-3
文件頁數: 1/1頁
文件大小: 22K
代理商: 2SK3124
1
Power F-MOS FETs
2SK3124
Silicon N-Channel Power F-MOS FET
unit: mm
I
Features
G
Avalanche energy capacity guaranteed
G
High-speed switching
G
No secondary breakdown
G
High electrostatic breakdown voltage
I
Applications
G
High-speed switching (switching power supply)
G
For high-frequency power amplification
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 320V, V
GS
= 0
V
GS
= ±20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 0.1A
V
DS
= 10V, I
D
= 0.1A
I
DR
= 0.1A, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DD
= 100V, I
D
= 0.1A
V
GS
= 10V, R
L
= 1
min
400
1
100
typ
17
160
48
10
5
65
35
40
70
max
10
±1
3
23
1.5
12.5
125
Unit
μ
A
μ
A
V
V
mS
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
400
±20
±0.5
±1
0.25
10
1
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 2mH, I
L
= 0.5A, 1 pulse
1: Gate
2: Drain
3: Source
U Type Package
6.5±0.1
5.3±0.1
4.35±0.1
4.6±0.1
2.3±0.1
0.75±0.1
1
2
3
0.93±0.1
2
0
1
7
1
2.3±0.1
0.5±0.1
0.5±0.1
0.1±0.05
1.0±0.1
相關PDF資料
PDF描述
2SK3125 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
2SK3126 Isolated Flyback Switching Regulator with 9V Output
2SK3127 N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
2SK3128 N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
2SK3129 N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
相關代理商/技術參數
參數描述
2SK3125 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
2SK3125_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications
2SK3125_08 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC-DC Converter, Relay Drive and
2SK3126 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 450V 10A 3PIN TO-220(NIS) - Rail/Tube
2SK3126(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 450V 10A 3-Pin(3+Tab) TO-220NIS
主站蜘蛛池模板: 鄱阳县| 虞城县| 大新县| 临安市| 奎屯市| 册亨县| 合川市| 六盘水市| 罗山县| 九江县| 彩票| 贵州省| 明光市| 镇远县| 彰武县| 三原县| 黑山县| 句容市| 象州县| 太白县| 天津市| 贵溪市| 宜昌市| 册亨县| 河西区| 湘西| 靖州| 台南市| 延长县| 广元市| 郴州市| 北海市| 鹤壁市| 通州市| 四子王旗| 太保市| 千阳县| 崇仁县| 赤峰市| 石景山区| 正阳县|