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參數資料
| 型號： | 2SK3125 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) |
| 中文描述： | 東芝場效應晶體管硅?頻道馬鞍山類型（喝醉MOSVI） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 226K |
| 代理商： | 2SK3125 |
2SK3125
2002-08-23
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS
VI
)
2SK3125
DC-DC Converter, Relay Drive and
Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 5.3 m
(typ.)
High forward transfer admittance: |Y
fs
| = 60 S (typ.)
Low leakage current: I
DSS
=
1
00 μA (max) (V
DS
= 30 V)
Enhancement-model: V
th
=
1
.5~3.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
20 k )
V
DGR
30
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
70
Drain current
Pulse
(Note 1)
I
DP
210
A
Drain power dissipation (Tc 25°C)
P
D
150
W
Single pulse avalanche energy
(Note 2)
E
AS
955
mJ
Avalanche current
I
AR
70
A
Repetitive avalanche energy (Note 3)
E
AR
15
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
0.833
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
25 V, T
ch
25°C, L 140 H, R
G
25 , I
AR
70 A
Note 3:
Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16H1A
Weight: 3.65 g (typ.)
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