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參數(shù)資料
| 型號： | 2SK3130 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ヰ-MOSV) |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型（ヰ- MOSV） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 203K |
| 代理商： | 2SK3130 |
2SK3130
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS
V
)
2SK3130
Switching Regulator Applications
Reverse-recovery time: t
rr
= 85 ns
Built-in high-speed flywheel diode
Low drain-source ON resistance: R
DS (ON)
= 1.12
(typ.)
High forward transfer admittance: |Y
fs
| = 5.0 S (typ.)
Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 600 V)
Enhancement model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
600
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
600
V
Gate-source voltage
V
GSS
±
30
V
DC
(Note 1)
I
D
6
Drain current
Pulse
(Note 1)
I
DP
24
A
Drain power dissipation (Tc
=
25°C)
P
D
40
W
Single pulse avalanche energy
(Note 2)
E
AS
345
mJ
Avalanche current
I
AR
6
A
Repetitive avalanche energy (Note 3)
E
AR
4
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C (initial), L
=
16.8 mH, R
G
=
25
, I
AR
=
6 A
Note 3:
Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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