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參數資料
| 型號： | 2SK3131 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 場效應晶體管硅?頻道馬鞍山類型 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 420K |
| 代理商： | 2SK3131 |
2SK3131
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
MOSV)
2SK3131
Chopper Regulator DC
DC Converter and Motor Drive
Applications
z
Fast reverse recovery time
z
Built-in high-speed free-wheeling diode
z
Low drain
source ON resistance
z
High forward transfer admittance
z
Low leakage current
: I
DSS
= 100 μA (max) (V
DS
= 500 V)
z
Enhancement mode
: V
th
= 2.4~3.4 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25°C)
: t
rr
= 105 ns (typ.)
: R
DS (ON)
= 0.085
(typ.)
: |Y
fs
| = 35 S (typ.)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
500
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
500
V
Gate
source voltage
V
GSS
±30
V
DC
(Note 1)
I
D
50
A
DC Drain current
Pulse (Note 1)
I
DP
200
A
Drain power dissipation (Tc
=
25°C)
P
D
250
W
Single pulse avalanche energy
(Note 2)
E
AS
525
mJ
Avalanche current
I
AR
50
A
Repetitive avalanche energy (Note 3)
E
AR
25
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
0.5
°C / W
Thermal resistance, channel to
ambient
R
th
(ch
a)
35.7
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD =
90 V, T
ch
= 25°C (initial), L = 357 μH, R
G
= 25
, I
AR
= 50 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
—
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3131(Q) | 功能描述:MOSFET N-ch 500V 50A 0.140 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3131_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3131_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3132 | 功能描述:MOSFET N-CH 500V 50A TO-3P(L) RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3132(Q) | 功能描述:MOSFET N-ch 500V 50A 0.110 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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