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參數資料
| 型號： | 2SK3205 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關穩壓器 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 128K |
| 代理商： | 2SK3205 |
2SK3205
2002-01-25
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
π
MOSV)
2SK3205
Switching Regulator Applications DC
DC Converter, and
Motor Drive Applications
4 V gate drive
Low drain
source ON resistance
High forward transfer admittance
Low leakage current
: I
DSS
=
1
00 μA (max) (V
DS
=
1
50 V)
Enhancement
mode
: V
th
= 0.8~2.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta = 25°C)
: R
DS (ON)
= 0.36
(typ.)
: |Y
fs
| = 4.5 S (typ.)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
150
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
150
V
Gate
source voltage
V
GSS
±20
V
DC
(Note 1)
I
D
5
Drain current
Pulse (Note 1)
I
DP
20
A
Drain power dissipation (Tc
=
25°C)
P
D
20
W
Single pulse avalanche energy
(Note 2)
E
AS
71
mJ
Avalanche current
I
AR
5
A
Repetitive avalanche energy (Note 3)
E
AR
2
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
6.25
°C / W
Thermal resistance, channel to
ambient
R
th
(ch
a)
125
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V
DD
= 50 V, T
ch
= 25°C (initial), L = 4.2 mH, I
AR
= 5 A, R
G
= 25
,
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
—
JEITA
SC-64
TOSHIBA
2-7B3B
Weight: 0.36 g (typ.)
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