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參數資料
| 型號： | 2SK315G |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|場效應| N溝道| 10mA的我（直）| SPAK |
| 文件頁數： | 1/12頁 |
| 文件大小： | 61K |
| 代理商： | 2SK315G |
2SK3134(L), 2SK3134(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-721B (Z)
3rd. Edition
Feb. 1999
Features
Low on-resistance
R
DS(on) =4m typ.
Low drive current
4V gate drive device can be driven from 5V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK317 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK318 | TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 4A I(D) | SOT-119VAR |
| 2SK3199 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3200 | MOSFET |
| 2SK3203(L).2SK3203(S) | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK316 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3160 | 制造商:Hitachi 功能描述:Silicon N Channel High Speed Power Switching Mosfet - 200V 10A 30W |
| 2SK3160-E | 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,200V,10A,0.13ohm,TO-220FM |
| 2SK3161 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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