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參數(shù)資料

2SK3209

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-759A (Z)

Target Specification 2nd. Edition

Mar. 2001

Features

Low on-resistance

DS = 40m typ.

High speed switching

4V gate drive device can be driven from 5V source

Outline

TO–220FM

1. Gate

2. Drain

3. Source

相關(guān)PDF資料	PDF描述
2SK3210(L)	30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3210L	30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3210STL	30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3214	10 A, 200 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3217-01MR	50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
2SK3209-E	制造商:Renesas Electronics Corporation 功能描述:
2SK321	制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:SI N-CHANNEL JUNCTION
2SK3210	制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3210L	制造商:Renesas Electronics Corporation 功能描述:

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