- 您現在的位置：買賣IC網 > PDF目錄33496 > 2SK3254 10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | 2SK3254 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PML, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 9K |
| 代理商： | 2SK3254 |
Specifications and information herin are subject to change without notice.
990118TM2fXHD
Absolute Maximum Ratings / Ta=25
°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
* ):Chip Performance Shown
V
A
W
°C
Electrical Characteristics / Ta=25
°C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Switching Time Test Circuit
VDSS
VGSS
ID*
IDP
PD
Tch
Tstg
TENTATIVE
(TC=25
°C)
unit
Features and Applications
Low ON-state resistance.
Low Qg.
500
±30
10
40
50
150
--55 to
±150
min
typ
max
unit
500
2.5
2.4
V
A
nA
V
S
pF
nC
ns
V
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
ID=1mA
, VGS=0
VDS=500V , VGS=0
VGS=
±30V , VDS=0
VDS=10V
, ID=1mA
VDS=10V
, ID=5A
ID=5A
, VGS=10V
VDS=20V
, f=1MHz
VDS=20V
, f=1MHz
VDS=20V
, f=1MHz
VDS=200V , ID=5A
VGS=10V
See Specified Test
Circuit
IS=5A
, VGS = 0
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
6.3
0.8
880
140
48
30
17
35
100
38
250
±100
3.5
1.0
1.5
50
P.G
2SK3254
S
G
D
VOUT
VDD=200V
RGS
ID=5A
RL=40
VGS=10V
PW=1
S
D.C.
≤0.5%
2SK3254
(Note) Be careful in handling the2SK3254 because it has no protection diode between gate and source.
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
Package Dimensions
TO-3PML(unit:mm)
16.0
φ 3.4
2.0
2.8
1.0
4.0
21.0
5.0
8.0
22.0
20.4
5.6
3.1
2.0
0.6
12
3
3.5
1 : Gate
2 : Drain
3 : Source
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3265 | 10 A, 700 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3272-01L | 80 A, 60 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3272-01SJ | 80 A, 60 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3274(L) | 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3274(S) | 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3262 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK3262-01MR | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 85 Milliohms;ID +/-20A;TO-220F15;PD 45W |
| 2SK3264-01MR | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:POWER MOSFET |
| 2SK3264-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK3265 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 700V 10A 3PIN TO-220(NIS) - Rail/Tube |
發布緊急采購，3分鐘左右您將得到回復。