- 您現在的位置：買賣IC網 > PDF目錄369204 > 2SK3306 (NEC Corp.) Switching N-channel power MOS FET industrial use PDF資料下載
參數資料
| 型號： | 2SK3306 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關功率場效應晶體管 工業級 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 69K |
| 代理商： | 2SK3306 |
Data Sheet D14004EJ2V0DS00
2
2SK3306
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain Leakage Current
I
DSS
100
μ
A
V
DS
= 500
V, V
GS
= 0
V
Gate to Source Leakage Current
I
GSS
±
100
nA
V
GS
=
±
30
V, V
DS
= 0
V
Gate to Source Cut-off Voltage
V
GS(off)
2.5
3.5
V
V
DS
= 10
V, I
D
= 1
mA
Forward Transfer Admittance
| y
fs
|
1.0
3.0
S
V
DS
= 10 V, I
D
= 2.5 A
Drain to Source On-state Resistance
R
DS(on)
1.35
1.5
V
GS
= 10
V, I
D
= 2.5
A
Input Capacitance
C
iss
700
pF
V
DS
= 10
V, V
GS
= 0
V, f = 1
MHz
Output Capacitance
C
oss
115
pF
Reverse Transfer Capacitance
C
rss
6
pF
Turn-on Delay Time
t
d(on)
16
ns
V
DD
= 150
V, I
D
= 2.5
A, V
GS(on)
= 10
V,
Rise Time
t
r
3
ns
R
G
= 10
,
R
L
= 60
Turn-off Delay Time
t
d(off)
33
ns
Fall Time
t
f
5.5
ns
Total Gate Charge
Q
G
13
nC
V
DD
= 400
V, V
GS(on)
= 10
V, I
D
= 5.0
A
Gate to Source Charge
Q
GS
4
nC
Gate to Drain Charge
Q
GD
4.5
nC
Body Diode Forward Voltage
V
F(S-D)
1.0
V
I
F
= 5.0
A, V
GS
= 0
V
Reverse Recovery Time
t
rr
0.7
μ
s
I
F
= 5.0
A, V
GS
= 0
V, di/dt = 50
A
/
μ
s
Reverse Recovery Charge
Q
rr
3.3
μ
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1 %
μ
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
#
#
#
#
#
#
#
#
#
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3307 | Switching N-channel power MOS FET industrial use |
| 2SK3324 | Switching N-channel power MOS FET industrial use |
| 2SK3325 | Switching N-channel power MOS FET industrial use |
| 2SK3325-S | Switching N-channel power MOS FET industrial use |
| 2SK3325-ZJ | Switching N-channel power MOS FET industrial use |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3306-AZ | 制造商:Renesas Electronics 功能描述:Nch 500V 5A 1500m@10V IsolatedTO220 Bulk |
| 2SK3307 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3307-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,70A,7,5m ohm,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-3P |
| 2SK3309 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3309(Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。