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參數(shù)資料
| 型號(hào)： | 2SK3307 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 66K |
| 代理商： | 2SK3307 |
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3307
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D14129EJ3V0DS00 (3rd edition)
March 2001 NS CP(K)
The mark
#
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3307 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 9.5
m
MAX. (V
GS
= 10
V, I
D
= 35
A)
R
DS(on)2
= 14
m
MAX. (V
GS
= 4.0
V, I
D
= 35
A)
Low C
iss
: C
iss
= 4650
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS(AC)
±
20
V
Drain Current (DC)
Drain Current (pulse)
Note1
I
D(DC)
±
70
A
I
D(pulse)
±
280
A
Total Power Dissipation (T
C
= 25°C)
P
T1
120
W
Total Power Dissipation (T
A
= 25°C)
P
T2
3.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Single Avalanche Current
Note2
I
AS
45
A
Single Avalanche Energy
Note2
E
AS
202
mJ
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, R
G
= 25
,
V
GS
= 20 V
→
0 V
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
1.04
°
C/W
Channel to Ambient
R
th(ch-A)
41.7
°
C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3307
TO-3P
(TO-3P)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3324 | Switching N-channel power MOS FET industrial use |
| 2SK3325 | Switching N-channel power MOS FET industrial use |
| 2SK3325-S | Switching N-channel power MOS FET industrial use |
| 2SK3325-ZJ | Switching N-channel power MOS FET industrial use |
| 2SK3326 | Switching N-channel power MOS FET industrial use |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3307-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,70A,7,5m ohm,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-3P |
| 2SK3309 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3309(Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3309(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3309_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
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