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參數資料
| 型號： | 2SK3307 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關功率場效應晶體管 工業級 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 66K |
| 代理商： | 2SK3307 |
Data Sheet D14129EJ3V0DS
2
2SK3307
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±20
V, V
DS
= 0
V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 35
A
30
47
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 35
A
7.5
9.5
m
R
DS(on)2
V
GS
= 4.0
V, I
D
= 35
A
10.5
14
m
Input Capacitance
C
iss
V
DS
= 10
V, V
GS
= 0
V, f = 1
MHz
4650
pF
Output Capacitance
C
oss
780
pF
Reverse Transfer Capacitance
C
rss
380
pF
Turn-on Delay Time
t
d(on)
I
D
= 35
A, V
GS(on)
= 10
V, V
DD
= 30
V,
90
ns
Rise Time
t
r
R
G
= 10
1260
ns
Turn-off Delay Time
t
d(off)
270
ns
Fall Time
t
f
370
ns
Total Gate Charge
Q
G
I
D
= 70
A , V
DD
= 48
V, V
GS
= 10
V
90
nC
Gate to Source Charge
Q
GS
14
nC
Gate to Drain Charge
Q
GD
24
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 70
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 70
A, V
GS
= 0
V,
60
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A/
μ
s
110
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1%
μ
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
(on)
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3307-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,70A,7,5m ohm,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-3P |
| 2SK3309 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3309(Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3309(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3309_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
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