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參數資料
| 型號： | 2SK3309 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關穩壓器 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 234K |
| 代理商： | 2SK3309 |
2SK3309
2002-09-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS
V
)
2SK3309
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 0.48
(typ.)
High forward transfer admittance: |Y
fs
| = 4.3 S (typ.)
Low leakage current: I
DSS
=
1
00 μA (max) (V
DS
= 450 V)
Enhancement-mode: V
th
= 3.0~5.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
450
V
Drain-gate voltage (R
GS
20 k )
V
DGR
450
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
10
Drain current
Pulse
(Note 1)
I
DP
40
A
Drain power dissipation (Tc 25°C)
P
D
65
W
Single pulse avalanche energy
(
Note 2)
E
AS
222
mJ
Avalanche current
I
AR
10
A
Repetitive avalanche energy
(
Note 3)
E
AR
6.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.92
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
83.3
°C/W
Note 1: Please use devise on condition that the channel temperature is
below 150°C.
Note 2: V
DD
90 V, T
ch
25°C (initial), L 3.7 mH, R
G
25 ,
I
AR
10 A
Note 3:
Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3309(Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3309(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3309_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK330BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SPAK |
| 2SK330GR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 2.6MA I(DSS) | SPAK |
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