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參數(shù)資料
型號(hào): 2SK3361
元件分類: JFETs
英文描述: 40 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MP-45F, ISOLATED TO-220, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 40K
代理商: 2SK3361
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999
MOS FIELD EFFECT TRANSISTOR
2SK3361
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No.
D14319EJ1V0DS00 (1st edition)
Date Published
April 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3361 is N-Channel MOS Field Effect Transistor
designed for high current switching application.
FEATURES
Low on-state resistance
RDS(on)1 = 20 m
MAX. (VGS = 10 V, ID = 20 A)
RDS(on)2 = 28 m
MAX. (VGS = 4.5 V, ID = 20 A)
Low Ciss: Ciss = 4900 pF TYP.
Built-in gate protection diode
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGSS(AC)
±20
V
Gate to Source Voltage
VGSS(DC)
+20, –10
V
Drain Current (DC)
ID(DC)
±40
A
Drain Current (pulse)
Note1
ID(pulse)
±160
A
Total Power Dissipation (TC = 25°C)
PT
35
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
40
A
Single Avalanche Energy
Note2
EAS
160
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25
, VGS = 20 V→0 V
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
3.57
°C/W
Channel to Ambient
Rth(ch-A)
62.5
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3361
Isolated TO-220
The mark 5
5
5 shows major revised points.
5
(Isolated TO-220)
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PDF描述
2SK3365-Z 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
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相關(guān)代理商/技術(shù)參數(shù)
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2SK3362 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:POWER MOSFET
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