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參數(shù)資料
型號(hào): 2SK3390IXTB-E
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: RP8P, 2 PIN
文件頁(yè)數(shù): 1/10頁(yè)
文件大小: 151K
代理商: 2SK3390IXTB-E
REJ03G0208-0400 Rev.4.00 Nov 08, 2007
Page 1 of 9
2SK3390
Silicon N-Channel MOS FET
UHF Power Amplifier
REJ03G0208-0400
Rev.4.00
Nov 08, 2007
Features
High power output, High gain, High efficiency
PG = 17 dB, Pout = 6.31 W,
ηadd = 60% min. (f = 836 MHz)
Compact package capable of surface mounting
Outline
1
2
3
RENESAS Package code : PLSS0003ZA-A
(Package name: RP8P)
D
G
S
1
2
3
1. Gate
2. Source
3. Drain
Note:
Marking is “IX”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
17
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
1
A
Drain peak current
ID(pulse)
Note1
2.5
A
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Notes: 1. PW
< 1sec, Tch < 150°C
2. Value at Tc = 25
°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
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參數(shù)描述
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