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參數資料
| 型號： | 2SK3417 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關穩壓器 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 249K |
| 代理商： | 2SK3417 |
2SK3417
2002-08-12
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS
V
)
2SK3417
Switching Regulator Applications
Reverse-recovery time: t
rr
= 60 ns (typ.)
Built-in high-speed flywheel diode
Low drain-source ON resistance: R
DS (ON)
= 1.6
(typ.)
High forward transfer admittance: Y
fs
= 4.0 S (typ.)
Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
500
V
Drain-gate voltage (R
GS
20 k )
V
DGR
500
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
5
Drain current
Pulse (Note 1)
I
DP
20
A
Drain power dissipation (Tc 25°C)
P
D
50
W
Single pulse avalanche energy
(Note 2)
E
AR
180
mJ
Avalanche current
I
AR
5
A
Repetitive avalanche energy (Note 3)
E
AR
5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.5
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
83.3
°C/W
Note 1: Please use devise on condition that the channel temperature is
below 150°C.
Note 2: V
DD
90 V, T
ch
25°C (initial), L 12.2 mH, R
G
25 ,
I
AR
5 A
Note 3:
Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
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相關代理商/技術參數 |
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