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參數資料
| 型號： | 2SK3494 |
| 廠商： | PANASONIC CORP |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode MOSFET |
| 中文描述： | 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-220C-G1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 73K |
| 代理商： | 2SK3494 |
Power MOSFETs
2SK3494
N-channel enhancement mode MOSFET
1
Publication date: March 2004
SJG00037AED
■
Features
Low on-resistance, low Q
g
High avalanche resistance
■
Applications
For PDP
For high-speed switching
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
V
DSS
250
V
Gate-source surrender voltage
V
GSS
I
D
±
30
V
Drain current
20
A
Peak drain current
I
DP
80
A
Avalanche energy capability
*
EAS
657
mJ
Power dissipation
P
D
50
W
T
a
=
25
°
C
1.4
Channel temperature
T
ch
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
0
1
2
3
(8.9)
(10.2)
0 to 0.3
(
(
10.5
±
0.3
4.6
±
0.2
1.4
±
0.1
0.8
±
0.1
2.54
±
0.3
2.5
±
0.2
1.4
±
0.1
1
±
0
3
±
0
(
1
±
0
0
±
0
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Note)*: L
=
2.79 mH, I
L
=
20 A, V
DD
=
50 V, 1 pulse, T
a
=
25°C
Marking Symbol: K3494
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
V
DSS
V
th
I
D
=
1 mA, V
GS
=
0
V
DS
=
10 V, I
D
=
1 mA
V
DS
=
200 V, V
GS
=
0
V
GS
=
±
30 V, V
DS
=
0
V
GS
=
10 V, I
D
=
10 A
V
DS
=
10 V, I
D
=
10 A
V
DS
=
25 V, V
GS
=
0, f
=
1 MHz
250
V
Gate threshold voltage
2.0
4.0
V
Drain-source cutoff current
I
DSS
10
μ
A
μ
A
m
Gate-source cutoff current
I
GSS
R
DS(on)
Y
fs
C
iss
±
1
Drain-source ON resistance
82
105
Forward transfer admittance
7
14
S
Short-circuit forward transfer capacitance
(Common-source)
2
450
pF
Short-circuit output capacitance
(Common-source)
C
oss
356
pF
Reverse transfer capacitance
(Common-source)
C
rss
40
pF
Turn-on delay time
t
d(on)
T
r
V
DD
≈
100 V, I
D
=
10 A
R
L
=
10
, V
GS
=
10 V
36
ns
Rise time
20
ns
Turn-off delay time
t
d(off)
184
ns
Fall time
t
f
29
ns
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