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參數資料
| 型號： | 2SK3550-01R |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 性病MOSFET的 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 113K |
| 代理商： | 2SK3550-01R |
2
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
R
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80μs Pulse test, Tch=25°C
10V
20V
8V
7.5V
7.0V
VGS=6.5V
0.1
1
10
0.1
1
10
100
g
ID [A]
Typical Transconductance
gfs=f(ID):80μs Pulse test, VDS=25V,Tch=25°C
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
I
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80μs Pulse test, VDS=25V,Tch=25°C
Characteristics
2SK3502-01MR
FUJI POWER MOSFET
ID=f(VDS):80μs Pulse test,Tch=25°C
0
25
50
75
100
125
150
0
10
20
30
40
50
60
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
0
2
4
6
8
10
12
VDS [V]
14
16
18
20
22
24
26
0
2
4
6
8
10
12
14
16
18
20
22
20V
10V
8V
7.5V
7.0V
I
Typical Output Characteristics
VGS=6.5V
0
25
50
75
100
125
150
0
50
100
150
200
250
300
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=10A
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PDF描述 |
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| 2SK3555-01MR | STD MOSFET |
| 2SK356 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK358 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 5A I(D) | TO-220AB |
| 2SK3581-01S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3587-01MR | MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2sk3550-01rsc | 制造商:Fuji Electric 功能描述: |
| 2SK3554-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 75 Milliohms;ID +/-37A;TO-220AB;PD 270W;-55 |
| 2SK3554-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3555-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3557-6-TB-E | 功能描述:射頻JFET晶體管 LOW-FREQUENCY AMPLIFIER RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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