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參數資料
| 型號： | 2SK356 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 250V五（巴西）直| 12A條（丁）|至3 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 113K |
| 代理商： | 2SK356 |
2
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
R
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80μs Pulse test, Tch=25°C
10V
20V
8V
7.5V
7.0V
VGS=6.5V
0.1
1
10
0.1
1
10
100
g
ID [A]
Typical Transconductance
gfs=f(ID):80μs Pulse test, VDS=25V,Tch=25°C
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
I
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80μs Pulse test, VDS=25V,Tch=25°C
Characteristics
2SK3502-01MR
FUJI POWER MOSFET
ID=f(VDS):80μs Pulse test,Tch=25°C
0
25
50
75
100
125
150
0
10
20
30
40
50
60
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
0
2
4
6
8
10
12
VDS [V]
14
16
18
20
22
24
26
0
2
4
6
8
10
12
14
16
18
20
22
20V
10V
8V
7.5V
7.0V
I
Typical Output Characteristics
VGS=6.5V
0
25
50
75
100
125
150
0
50
100
150
200
250
300
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=10A
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK358 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 5A I(D) | TO-220AB |
| 2SK3581-01S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3587-01MR | MOSFETs |
| 2SK3590-01 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3592-01L | STD LQg MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3561 | 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(Q) | 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(Q,M) | 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(STA4,Q,M) | 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK3561Q | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220NIS |
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