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參數(shù)資料
| 型號(hào)： | 2SK3588-01S |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 73 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TPACK-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 110K |
| 代理商： | 2SK3588-01S |
1
Item
Drain-source voltage
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AS *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
Ratings
Unit
V
V
A
A
V
A
mJ
kV/μs
kV/μs
W
100
70
±50
±200
±30
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
50
465
20
5
1.67
135
+150
-55 to +150
Operating and storage
temperature range
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3588-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=100V V
GS
=0V
DS
=80V V
GS
=0V
V
GS
I
D
=25A V
GS
=10V
I
D
=25A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=25A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
100
3.0
V
V
μA
nA
m
S
pF
nC
A
V
μs
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.926
75.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
V
ch
=25°C
V
ch
=125°C
=±30V
DS
=0V
V
CC
=50V
I
D
=50A
V
GS
=10V
L=100
μ
H T
ch
=25°C
I
F
=50A V
GS
=0V T
ch
=25°C
I
F
=50A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
°C
°C
5.0
25
250
100
25
10
19
30
15
1830
460
2745
690
38
20
35
50
23
52
16
18
57
30
53
75
35
78
24
27
50
1.10
0.1
0.4
1.65
Outline Drawings
Gate(G)
Source(S)
Drain(D)
*3 I
F
-I
D
, -di/dt=50A/μs, Vcc=
DSS
, Tch=
=
*1 L=223μH, Vcc=48V *2 Tch=
*4 V
DS
<
*5 V
GS
=-30V
www.fujielectric.co.jp/denshi/scd
Equivalent circuit schematic
P4
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