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參數(shù)資料
| 型號： | 2SK3591 |
| 廠商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | N溝道功率MOSFET硅 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 99K |
| 代理商： | 2SK3591 |
2
Characteristics
2SK3591-01MR
FUJI POWER MOSFET
ID=f(VGS):80μs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80μs Pulse test,Tch=25°C
gfs=f(ID):80μs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80μs Pulse test, Tch=25°C
0
25
50
starting Tch [
°
C]
75
100
125
150
0
100
200
300
400
500
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=40A
0
2
4
6
8
10
12
0
40
80
120
160
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
I
VDS [V]
Typical Output Characteristics
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
I
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
g
ID [A]
Typical Transconductance
0
40
80
ID [A]
120
160
0.00
0.03
0.06
0.09
0.12
0.15
7.0V
6.5V
R
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK897 | N-CHANNEL SILICON POWER MOSFET |
| 2SK897-MR | N-CHANNEL SILICON POWER MOSFET |
| 3.0SMCJ210C-T/R | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3.0SMCJ100C-T/R | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3.0SMCJ100CA | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3591-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK3592-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3594-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 50 Milliohms;ID +/-45A;TO-220AB;PD 270W |
| 2SK3594-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3595-01MRSC | 制造商:Fuji Electric 功能描述: |
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