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參數(shù)資料
型號: 2SK3634-Z
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開關(guān)N溝道功率MOSFET
文件頁數(shù): 1/8頁
文件大小: 167K
代理商: 2SK3634-Z
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3634
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15936EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2001
The mark
shows major revised points.
DESCRIPTION
The 2SK3634 is N-channel MOS FET device that features
a low on-state resistance and excellent switching
characteristics, and designed for high voltage applications
such as DC/DC converter.
FEATURES
High voltage: V
DSS
= 200 V
Gate voltage rating: ±30 V
R
DS(on)
= 0.60
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
Low C
iss
: C
iss
= 270 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Built-in gate protection diode
TO-251/TO-252 package
Avalanche capability rated
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
200
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±30
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note1
I
D(DC)
±6.0
A
I
D(pulse)
±18
A
Total Power Dissipation (T
C
= 25°C)
P
T1
20
W
Total Power Dissipation (T
A
= 25°C)
P
T2
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Pulse Avalanche Energy
Note3
T
stg
–55 to +150
°C
I
AS
6.0
A
E
AS
3.6
mJ
I
AR
6.0
A
E
AR
2.0
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD =
100 V, R
G
= 25
,
V
GS
= 20
0 V, L = 100
μ
H
3.
T
ch
125°C , R
G
= 25
, V
DD
= 100 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3634
TO-251 (MP-3)
2SK3634-Z
TO-252 (MP-3Z)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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