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參數資料
| 型號： | 2SK365-BL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | 2-4E1C, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 679K |
| 代理商： | 2SK365-BL |
2SK365
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current
and Impedance Converter Applications
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 80 (typ.) (IDSS = 5 mA)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
50
V
Drain current
IDSS
(Note 1)
VDS = 10 V, VGS = 0
1.2
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.25
1.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2)
5.0
19
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3
pF
Drain-source ON resistance
RDS (ON)
VDS = 10 mV, VGS = 0
(Note 2)
80
Ω
Note 1: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Note 2: Condition of the typical value IDSS = 5 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK365-BL(F) | 制造商:Toshiba 功能描述:Nch -50V 6mA to 14mA 80@10mV MINI Bulk 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin Mini |
| 2SK365-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3662(F) | 制造商:Toshiba 功能描述:Nch 60V 35A 0.0125@10V TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 60V 35A TO220NIS |
| 2SK3663-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R Tape & Reel 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,SSP3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R |
| 2SK3664-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R |
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