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參數資料
| 型號： | 2SK3651-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 25 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/4頁 |
| 文件大小： | 115K |
| 代理商： | 2SK3651-01R |
1
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=72V
ID=12A
VGS=10V
L=309
H Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/s
Tch=25°C
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
250
VDSX *5
220
Continuous drain current
ID
±37
Pulsed drain current
ID(puls]
±148
Gate-source voltage
VGS
±30
Non-repetitive Avalanche current
IAS *2
37
Maximum Avalanche Energy
EAS *1
251.9
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
Ta=25°C
3.10
Tc=25°C
115
Operating and storage
Tch
+150
temperature range
Tstg
Isolation voltage
VISO *6
2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3651-01R
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=12.5A
VGS=10V
ID=12.5A
VDS=25V
VCC=72V ID=12.5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
1.087
40.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
V
A
V
A
mJ
kV/s
W
°C
kVrms
250
3.0
5.0
25
250
10
100
75
100
816
2000
3000
400
600
25
38
20
30
45
60
90
20
30
44
66
14
21
16
24
37
1.10
1.65
0.45
1.5
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
*1 L=309H, Vcc=48V
*2 Tch 150°C
<
*4 VDS
250V
<
=
www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V *6 t=60sec f=60Hz
=
TO-3PF
[0311]
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