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參數資料
| 型號： | 2SK3690-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 4.5 A, 600 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 123K |
| 代理商： | 2SK3690-01 |
1
TO-220AB
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
600
VDSX
600
Continuous Drain Current
ID
4.5
Pulsed Drain Current
ID(puls]
±18
Gate-Source Voltage
VGS
±30
Maximum Avalanche current
IAR
4.5
Non-Repetitive
EAS
261.1
Maximum Avalanche Energy
Repetitive
EAR
8
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
80
2.02
Operating and Storage
Tch
+150
Temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3690-01
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=2.25A
VGS=10V
ID=2.25A
VDS=25V
VCC=300V
ID=2.25A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
1.563
62
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MH
VCC=300V
ID=4.5A
VGS=10V
IF=4.5A VGS=0V Tch=25°C
IF=4.5A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
600
3.0
5.0
25
250
10
100
1.8
2.3
2.5
5
400
600
60
90
35
18
27
46
30
45
5
7.5
15
23
5.5
8
3
4.5
1.00
1.50
0.7
3.5
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
VGS=-30V
Note *1
Note *2
Note *3
VDS 600V
Note *4
Tc=25°C
Ta=25°C
=
<
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
Note *1:Tch
150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=1.8A,L= 148mH,
VCC=60V,RG=50
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF -ID, -di/dt = 50A/
s,VCC BVDSS,Tch 150°C
=
<
=
<
=
<
=
<
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