- 您現在的位置：買賣IC網 > PDF目錄33502 > 2SK3740-ZK-AZ 20 A, 250 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | 2SK3740-ZK-AZ |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 250 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-263, MP-25ZK, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 169K |
| 代理商： | 2SK3740-ZK-AZ |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3740
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16913EJ1V0DS00 (1st edition)
Date Published November 2003 NS CP(K)
Printed in Japan
2003
DESCRIPTION
The 2SK3740 is N-channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, designed for high voltage
applications such as lamp drive, DC/DC converter, and
actuator driver.
FEATURES
Gate voltage rating: ±30 V
Low on-state resistance
RDS(on) = 160 m
MAX. (VGS = 10 V, ID = 10 A)
Low gate charge
QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A)
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
250
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±20
A
Drain Current (pulse)
Note1
ID(pulse)
±60
A
Total Power Dissipation
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
100
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
20
A
Single Avalanche Energy
Note2
EAS
40
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 125 V, RG = 25
, VGS = 20 → 0 V, L = 100
H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.25
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3740-ZK
TO-263 (MP-25ZK)
(TO-263)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3745LS | 2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3746 | 2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3749 | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3754 | 5 A, 30 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3757 | 2 A, 450 V, 2.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3740-ZK-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,250V/20A,TO263 |
| 2SK3742 | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3742(Q) | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3742(Q,M) | 功能描述:MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3742(STA4,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。