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參數(shù)資料
| 型號(hào)： | 2SK3747 |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-3PML, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 36K |
| 代理商： | 2SK3747 |
2SK3747
No.7767-1/4
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
High reliability (Adoption of HVP process).
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
1500
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
2A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
4
A
Allowable Power Dissipation
PD
3.0
W
Tc=25
°C50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
42
mJ
Avalanche Current *2
IAV
2A
*1 VDD=99V, L=20mH, IAV=2A
*2 L
≤20mH, single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
1500
V
Zero-Gate Voltage Drain Current
IDSS
VDS=1200V, VGS=0V
100
A
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.5
3.5
V
Forward Transfer Admittance
yfs
VDS=20V, ID=1A
0.7
1.4
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1A, VGS=10V
10
13
Marking : K3747
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7767A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
62005QB MS IM TB-00001301 / 81004QB TS IM TB-00000018
2SK3747
N-Channel Silicon MOSFET
High-Voltage, High-Speed Switching
Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3760 | 3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3767 | 2 A, 600 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3827 | 40 A, 100 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3835 | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3846 | 26 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3747 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N TO-3PML |
| 2SK3747-1E | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3747-1EX | 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES |
| 2SK3747-MG8 | 功能描述:MOSFET HIGH-VOLTAGE POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3748 | 功能描述:MOSFET HIGH-VOLTAGE POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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