- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄55799 > 2SK3835 (SANYO SEMICONDUCTOR CO LTD) 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3835 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-3PML, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 37K |
| 代理商： | 2SK3835 |
2SK3835
No.8637-1/4
Features
Ultrahigh-speed switching.
4V drive.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
50
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
200
A
Allowable Power Dissipation
PD
3.0
W
Tc=25
°C40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
175
mJ
Avalanche Current *2
IAV
50
A
*1 VDD=20V, L=100H, IAV=50A
*2 L
≤100H, single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=25A
21
35
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=25A, VGS=10V
11.5
15
m
RDS(on)2
ID=25A, VGS=4V
16
22
m
Marking : K3835
Continued on next page.
N2505QA MS IM TB-00001913
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SK3835
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Ordering number : EN8637
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3846 | 26 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3857TV-A | 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3889-01L | 9 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3900-ZP | 82 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3977-TL | 10000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3842(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 60V 75A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。