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參數資料
型號: 2SK3797
廠商: Toshiba Corporation
英文描述: Silicon N-Channel MOS Type
中文描述: 硅N溝道馬鞍山型
文件頁數: 1/6頁
文件大小: 220K
代理商: 2SK3797
2SK3797
2005-01-24
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (
π
-MOSVI)
2SK3797
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 0.32
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 7.5 S (typ.)
Low leakage current: I
DSS
= 100
μ
A (V
DS
= 600 V)
Enhancement model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DSS
600
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
600
V
Gate-source voltage
V
GSS
±
30
V
DC
(Note 1)
I
D
13
Drain current
Pulse (t
=
1 ms)
(Note 1)
I
DP
52
A
Drain power dissipation (Tc
=
25°C)
P
D
50
W
Single pulse avalanche energy
(Note 2)
E
AS
1033
mJ
Avalanche current
I
AR
13
A
Repetitive avalanche energy (Note 3)
E
AR
5.0
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
-55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.5
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: V
DD
=
90 V, T
ch
=
25°C (initial), L
=
10.7 mH, I
AR
=
13 A, R
G
=
25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
1
3
2
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