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參數資料
| 型號： | 2SK3799 |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 190K |
| 代理商： | 2SK3799 |
2SK3799
2010-01-29
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (
π-MOSIV)
2SK3799
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
High forward transfer admittance: |Yfs| = 6.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 k)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
8
A
Drain current
Pulse
(Note 1)
IDP
24
A
Drain power dissipation (Tc = 25°C)
PD
50
W
Single pulse avalanche energy
(Note 2)
EAS
1080
mJ
Avalanche current
IAR
8
A
Repetitive avalanche energy (Note 3)
EAR
5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.5
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 30.9 mH, RG = 25 Ω, IAR = 8 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
1. Gate
2. Drain
3. Source
1
3
2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3799(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 8A 3PIN SC-67 - Rail/Tube 制造商:Toshiba 功能描述:Nch 900V 8A 1.3@10V TO220SIS Bulk 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
| 2SK3799(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 8A TO220SIS 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK3799(STA4,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3799(STA4,Q,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET |
| 2SK3800 | 功能描述:MOSFET N-CH 40V TO-220S 制造商:sanken 系列:- 包裝:帶卷（TR） 零件狀態:新產品 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:40V 電流 - 連續漏極（Id）（25°C 時）:70A（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:6 毫歐 @ 35A，10V 不同 Id 時的 Vgs（th）（最大值）:4V @ 1mA 不同 Vgs 時的柵極電荷（Qg）:- 不同 Vds 時的輸入電容（Ciss）:5100pF @ 10V 功率 - 最大值:80W 工作溫度:150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-3，D2Pak（2 引線+接片），TO-263AB 供應商器件封裝:TO-220S 標準包裝:1,000 |
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