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參數資料
| 型號： | 2SK3833 |
| 元件分類： | JFETs |
| 英文描述： | 48 A, 100 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PB, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 2SK3833 |
2SK3833
No.8016-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC Converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
48
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
192
A
Allowable Power Dissipation
PD
2.5
W
Tc=25
°C85
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
144
mJ
Avalanche Current *2
IAV
48
A
*1. VDD=20V, L=100H, IAV=48A
*2. L
≤100
H, 1 Pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=24A
20
33
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=24A, VGS=10V
26
34
m
RDS(on)2
ID=24A, VGS=4V
31
43
m
Input Capacitance
Ciss
VDS=20V, f=1MHz
4200
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
300
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
250
pF
Marking : K3833
Continued on next page.
21405QA TS IM TB-00000314
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SK3833
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Ordering number : ENN8016
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| 2SK3842 | 75 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 2SK3844 | 45 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3842(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 60V 75A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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