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參數資料
型號: 2SK3904
元件分類: JFETs
英文描述: 19 A, 450 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-16C1B, SC-65, 3 PIN
文件頁數: 1/6頁
文件大小: 253K
代理商: 2SK3904
2SK3904
2005-01-24
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (
π-MOSVI)
2SK3904
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.2 (typ.)
High forward transfer admittance: Yfs = 9.5 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 450 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 k)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
19
Drain current
Pulse
(Note 1)
IDP
76
A
Drain power dissipation (Tc
= 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
820
mJ
Avalanche current
IAR
19
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C, L = 3.79 mH, RG = 25 , IAR = 19 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
JEITA
SC-65
TOSHIBA
216C1B
Weight: 4.6 g (typ.)
1
3
2
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PDF描述
2SK3919-AZ 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB
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相關代理商/技術參數
參數描述
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