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參數資料
型號: 2SK3919-ZK
元件分類: 小信號晶體管
英文描述: 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
封裝: TO-252, MP-3Z, 3 PIN
文件頁數: 1/8頁
文件大小: 166K
代理商: 2SK3919-ZK
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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MOS FIELD EFFECT TRANSISTOR
2SK3919
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D17078EJ2V0DS00 (2nd edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
The mark
shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3919
TO-251 (MP-3)
2SK3919-ZK
TO-252 (MP-3ZK)
DESCRIPTION
The 2SK3919 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 5.6 m
MAX. (VGS = 10 V, ID = 32 A)
Low Ciss: Ciss = 2050 pF TYP.
5 V drive available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±64
A
Drain Current (pulse)
Note1
ID(pulse)
±256
A
Total Power Dissipation (TC = 25°C)
PT1
36
W
Total Power Dissipation
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
27
A
Single Avalanche Energy
Note2
EAS
73
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25
, VGS = 20 → 0 V
(TO-251)
(TO-252)
相關PDF資料
PDF描述
2SK3920-01 67 A, 120 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3927-01SJ 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3927-01S 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3930-01L 11 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3933-01L 11 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
參數描述
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