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參數資料
| 型號： | 2SK3993 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封裝： | TO-251, MP-3, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 182K |
| 代理商： | 2SK3993 |
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MOS FIELD EFFECT TRANSISTOR
2SK3993
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
Document No. D17322EJ2V0DS00 (2nd edition)
Date Published September 2005 NS CP(K)
Printed in Japan
2004
The mark
shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3993
TO-251 (MP-3)
2SK3993-ZK
TO-252 (MP-3ZK)
DESCRIPTION
The 2SK3993 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 3.8 m
Ω MAX. (VGS = 10 V, ID = 32 A)
Low Ciss: Ciss = 4770 pF TYP.
5 V drive available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±64
A
Drain Current (pulse)
Note1
ID(pulse)
±256
A
Total Power Dissipation (TC = 25°C)
PT1
40
W
Total Power Dissipation
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
41
A
Single Avalanche Energy
Note2
EAS
168
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25
Ω, VGS = 20 → 0 V
(TO-251)
(TO-252)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3993-ZK | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4016 | 13 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK4021 | 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK4059TK-A | 0.26 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK4059TK-B | 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3993-ZK-E1-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3993-ZK-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel |
| 2SK3993-ZK-E2-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3994(Q) | 制造商:Toshiba 功能描述:Nch 250V 20A 0.105@10V TO220NIS Bulk |
| 2SK3994(Q,T) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 20A TO220NIS |
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