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參數資料
| 型號： | 2SK4059TK-B |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | TESM3, 2-1R1A, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 147K |
| 代理商： | 2SK4059TK-B |
2SK4059TK
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK4059TK
For ECM
Application for compact ECM
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain power dissipation (Ta
= 25°C)
PD
100
mW
Junction Temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
IDSS CLASSIFICATION
A-Rank
140~240A
B-Rank
210~350A
BK-Rank
210~400A
C-Rank
320~500A
Marking
Equivalent Circuit
Unit: mm
JEDEC
-
JEITA
-
TOSHIBA
2-1R1A
Weight: 2.2mg (typ.)
TESM3
1.Drain
2.Source
3.Gate
D
G
S
IDSS Classification Symbol
A :A-Rank
B :B-Rank
Type Name
8
C :C-Rank
BK-Rank
1.
4±0.
05
0.
32
±0
.0
5
1
2
3
0.
45
0.
22
±
0.
05
0.8±0.05
0.
9±0.
1
1.2±0.05
0.
39
5±0.
03
0.
1±0.
05
0.
45
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相關代理商/技術參數 |
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|---|---|
| 2SK4059TV | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For ECM |
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| 2SK4063LS | 制造商:SANYO 功能描述:MOSFET, N CH 500V 16A TO220F Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 500V 16A TO220F 制造商:Sanyo 功能描述:Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220FI |
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