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參數資料
| 型號： | 2SK4070-ZK-E1-AY |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應管 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 211K |
| 代理商： | 2SK4070-ZK-E1-AY |
Data Sheet D18785EJ2V0DS
2
2SK4070
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
30 V, V
DS
= 0 V
±
100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
2.9
3.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 0.5 A
0.2
0.4
S
Drain to Source On-state Resistance
Note
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 A
9.2
11
Ω
Input Capacitance
C
iss
V
DS
= 10 V,
110
pF
Output Capacitance
C
oss
V
GS
= 0 V,
50
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
11
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 0.5 A,
7.5
ns
Rise Time
t
r
V
GS
= 10 V,
6
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
Ω
11
ns
Fall Time
t
f
18
ns
Total Gate Charge
Q
G
V
DD
= 450 V,
5
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V,
1
nC
Gate to Drain Charge
Q
GD
I
D
= 1.0 A
2.8
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 1.0 A, V
GS
= 0 V
0.86
1.5
V
Reverse Recovery Time
t
rr
I
F
= 1.0 A, V
GS
= 0 V,
135
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
285
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
Ω
50
Ω
PG.
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK4070-ZK-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4073LS | 功能描述:MOSFET N-CH 60V 90A TO-220FI RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK4074LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4075B | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4075B-ZK-E1-AY | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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