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參數資料
| 型號： | 2SK4108 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關穩壓器 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 293K |
| 代理商： | 2SK4108 |
2SK4108
2007-06-29
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (
π
-MOS VI)
2SK4108
Switching Regulator Applications
z
Low drain
source ON resistance
z
High forward transfer admittance
z
Low leakage current
z
Enhancement mode
Absolute Maximum Ratings
(Ta = 25°C)
: R
DS
(ON)
= 0. 21
Ω
(typ.)
: |Y
fs
| = 14 S (typ.)
: I
DSS
= 100
μ
A (max) (V
DS
= 500 V)
: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Characteristic
Symbol
Rating
Unit
Drain
source voltage
V
DSS
500
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
500
V
Gate
source voltage
V
GSS
±30
V
DC
(Note 1)
I
D
20
A
Drain current
Pulse (Note 1)
I
DP
80
A
Drain power dissipation (Tc = 25°C)
P
D
150
W
Single-pulse avalanche energy
(Note 2)
E
AS
960
mJ
Avalanche current
I
AR
20
A
Repetitive avalanche energy (Note 3)
E
AR
15
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
0.833
°C / W
Thermal resistance, channel to
ambient
R
th (ch
a)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 4.08 mH, R
G
= 25
Ω
, I
AR
= 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK4108(F) | 制造商:Toshiba 功能描述:Nch 500V 20A 0.27@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 20A 500V TO3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 20A, 500V, TO3P |
| 2SK4108(F,T) | 功能描述:MOSFET N-Ch FET VDSS 500V RDS 0.21 Ohm Yfs 14S RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK4108(S1V,E,S) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK4108(STA1,E,S) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK4111(Q,T) | 功能描述:MOSFET MOSFET N-Ch, 600V, 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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