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參數資料
| 型號： | 2SK4191LS |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 4.8 A, 400 V, 1.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220FI, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 58K |
| 代理商： | 2SK4191LS |
2SK41911LS
No. A1206-1/5
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
400
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
IDc*1
Limited only by maximum temperature Tch=150°C5
A
IDpack*2
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
4.8
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
16.5
A
Allowable Power Dissipation
PD
2.0
W
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
28
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
82.4
mJ
Avalanche Current *5
IAV
5A
*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=5mH, IAV=5A
*5 L≤5mH, single pulse
Marking : K4191
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA1206
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
52808QB TI IM TC-00001362
SANYO Semiconductors
DATA SHEET
2SK4191LS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK4192LS | 制造商:SANYO 功能描述:MOSFET, N CH, 400V, 7A, TO-220FI Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 400V 7A TO-220FI 制造商:Sanyo 功能描述:Trans MOSFET N-CH 400V 7A 3-Pin(3+Tab) TO-220FI |
| 2SK4193LS | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 450V 4.5A TO-220FI |
| 2SK4194LS | 制造商:SANYO Semiconductor Co Ltd 功能描述:Trans MOSFET N-CH 450V 6A 3-Pin(3+Tab) TO-220FI Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 450V 6A TO-220FI |
| 2SK4195LS | 制造商:SANYO 功能描述:MOSFET, N CH, 500V, 4A, TO-220FI Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 500V 4A TO-220FI 制造商:Sanyo 功能描述:Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220FI |
| 2SK4196LS | 功能描述:MOSFET N-CH 500V 5.5A TO-220FI RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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