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參數(shù)資料
| 型號： | 2SK4201-S19-AY |
| 元件分類： | JFETs |
| 英文描述： | 80 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 184K |
| 代理商： | 2SK4201-S19-AY |
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MOS FIELD EFFECT TRANSISTOR
2SK4201
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D19504EJ1V0DS00 (1st edition)
Date Published November 2008 NS
Printed in Japan
2008
DESCRIPTION
The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on) = 13 m
Ω MAX. (VGS = 10 V, ID = 40 A)
Low input capacitance
Ciss = 4700 pF TYP.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4201-S19-AY
Note
Pure Sn (Tin)
Tube 50 p/tube
TO-220 typ. 1.9 g
Note Pb-free (This product does not contain Pb in the external electrode).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±80
A
Drain Current (pulse)
Note1
ID(pulse)
±240
A
Total Power Dissipation (TC = 25
°C)
PT1
125
W
Total Power Dissipation (TA = 25
°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
42.4
A
Single Avalanche Energy
Note2
EAS
180
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100
μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.0
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
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| 2SK4209 | 12 A, 800 V, 1.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK4227JS | POWER, FET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4203LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4204LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4207 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Swiching Regulator Applications |
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| 2SK4209 | 功能描述:MOSFET N-CH 800V 12A TO-3PB RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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