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參數資料
| 型號： | 2SK656 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For Switching |
| 中文描述： | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-72, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 76K |
| 代理商： | 2SK656 |
285
Silicon MOS FETs (Small Signal)
2SK0656
(2SK656)
Silicon N-Channel MOS FET
For switching
I
Features
G
High-speed switching
G
Small drive current owing to high input inpedance
G
High electrostatic breakdown voltage
Internal Connection
G
R
1
D
S
R
2
1: Source
2: Drain
3: Gate
NS-B1 Package
4.0
±0.2
0.75 max.
2.0
±0.2
0.45
(2.5) (2.5)
0.7
±0.1
2
3
1
+0.20
0.45
+0.20
7
3
±
(
(
1
±
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
200
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
OH
V
OL
R
1
+ R
2*1
C
iss
C
oss
C
rss
t
on*
2
t
off*
2
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100
μ
A, V
GS
= 0
I
D
= 100
μ
A, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DD
= 5V, V
GS
= 1V, R
L
= 200
V
DD
= 5V, V
GS
= 5V, R
L
= 200
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200
*1
Resistance ratio R
1
/R
2
= 1/50
*2
Pulse measurement
min
40
50
1.5
20
4.5
100
typ
35
9
4.5
1.1
Unit
μ
A
μ
A
V
V
mS
V
V
k
pF
pF
pF
μ
s
μ
s
max
10
80
3.5
50
1
200
1
1
Note) The part number in the parenthesis shows conventional part number.
unit: mm
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK0657 | For Switching |
| 2SK657 | For Switching |
| 2SK0662 | Silicon N-Channel Junction FET |
| 2SK0663 | For Low-Frequency Amplification |
| 2SK663 | For Low-Frequency Amplification |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK657 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK658 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 100MA I(D) | SPAK |
| 2SK659 | 制造商:NEC 制造商全稱:NEC 功能描述:N CHANNEL MOS FIELD EFECT POWER TRANSISTOR |
| 2SK66 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92 |
| 2SK660 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
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