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參數資料
| 型號： | 2SK710-BL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | 2-4E1C, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 147K |
| 代理商： | 2SK710-BL |
2SK710
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK710
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
Audio Frequency Amplifier Applications
High |Yfs|: |Yfs| = 25 mS (typ.)
Low Ciss: Ciss = 7.5 pF (typ.)
Low noise
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-20
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = -15 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-20
V
Drain current
IDSS
(Note)
VDS = 5 V, VGS = 0
6
32
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 5 V, ID = 1 mA
-2.5
V
Forward transfer admittance
Yfs
VDS = 5 V, VGS = 0, f = 1 kHz
15
25
mS
Input capacitance
Ciss
VDS = 5 V, VGS = 0, f = 1 MHz
7.5
10
pF
Reverse transfer capacitance
Crss
VDG = 5 V, ID = 0, f = 1 MHz
2
3
pF
Noise figure
NF
VDS = 5 V, ID = 1 mA
Rg = 1 kW, f = 1 kHz
0.5
3
dB
Note: IDSS classification GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK710GR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SPAK |
| 2SK710V | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 16MA I(DSS) | SPAK |
| 2SK711 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type High Frequency Amplifier Applications |
| 2SK711_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type High Frequency Amplifier Applications |
| 2SK711BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 10MA I(DSS) | SC-59 |
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