- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358641 > 3LN01N (Sanyo Electric Co.,Ltd.) N-Channel Silicon MOSFET(Ultrahigh-Speed Switching Applications)(超高速轉(zhuǎn)換應(yīng)用的N溝道硅MOSFET) PDF資料下載
參數(shù)資料
| 型號： | 3LN01N |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET(Ultrahigh-Speed Switching Applications)(超高速轉(zhuǎn)換應(yīng)用的N溝道硅MOSFET) |
| 中文描述： | N溝道MOSFET的硅（超高速開關(guān)應(yīng)用）（超高速轉(zhuǎn)換應(yīng)用的?溝道硅MOSFET的） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 27K |
| 代理商： | 3LN01N |
3LN01N
No.6544-1/4
Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET
3LN01N
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
30
±
10
0.15
0.6
0.4
150
PW
≤
10
μ
s, duty cycle
≤
1%
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : YA
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=
±
8V, VDS=0
VDS=10V, ID=100
μ
A
VDS=10V, ID=80mA
30
V
μ
A
μ
A
V
S
10
±
10
1.3
0.4
0.15
0.22
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6544
Package Dimensions
unit : mm
2178
[3LN01N]
71400 TS IM TA-1991
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Source
2 : Drain
3 : Gate
SANYO : NP
5.0
4.0
0.5
0
2
1
5
0.45
0.45
4.0
0.44
1.3
1.3
1
2
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 3LN01SP | 3LN01SP |
| 3LN01S | Ultrahigh-Speed Switching Applications |
| 3LN02SP | 30V N-Channel PowerTrench MOSFET |
| 3LN03M | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 3LN03SS | General-Purpose Switching Device Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3LN01S | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 3LN01S_06 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 3LN01S_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 3LN01S-K-TL-E | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 3LN01SP | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:3LN01SP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。