欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 3LP01SS
廠商: Sanyo Electric Co.,Ltd.
英文描述: Ultrahigh-Speed Switching Applications
中文描述: 超高速開關應用
文件頁數: 1/4頁
文件大小: 27K
代理商: 3LP01SS
3LP01SS
No.6648-1/4
Ultrahigh-Speed Switching Applications
P-Channel Silicon MOSFET
3LP01SS
Features
Low ON-resistance.
Ultrahigh-Speed Switching.
2.5V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
--30
±
10
--0.1
--0.4
0.15
150
PW
10
μ
s, duty cycle
1%
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=
±
8V, VDS=0
VDS=--10V, ID=--100
μ
A
VDS=--10V, ID=--50mA
--30
V
μ
A
μ
A
V
mS
--10
±
10
--1.4
--0.4
80
110
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6648
Package Dimensions
unit : mm
2179
[3LP01SS]
92500 TS IM TA-1981
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
0
0.25
0.2
1.4
0.45
1
3
2
0
1
0
0
0.1
1 : Gate
2 : Source
3 : Drain
SANYO : SSFP
相關PDF資料
PDF描述
3LP02C P ?`???l??MOS ?`?V???R???d?E?????g?????W?X?^ ???????X?C?b?`???O?p
3LP02N P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(超高速轉換應用的P溝道硅MOSFET)
3LP02SP P-Channel Silicon MOSFET(Ultrahigh-Speed Switching Applications)(超高速轉換應用的P溝道硅MOSFET)
3LP03M 3LP03M
3LP03SS P-Channel Silicon MOSFET General-Purpose Switching Device
相關代理商/技術參數
參數描述
3LP01SS_06 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
3LP01SS_12 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
3LP01SS-TL-E 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
3LP01SS-TL-EX 功能描述:MOSFET P-CH 30V SOT-623 制造商:on semiconductor 系列:- 包裝:帶卷(TR) 零件狀態:停產 FET 類型:P 溝道 技術:MOSFET(金屬氧化物) 漏源電壓(Vdss):30V 電流 - 連續漏極(Id)(25°C 時):100mA(Ta) 驅動電壓(最大 Rds On,最小 Rds On):1.5V,4V 不同 Id 時的 Vgs(th)(最大值):- 不同 Vgs 時的柵極電荷?(Qg)(最大值):1.43nC @ 10V Vgs(最大值):±10V 不同 Vds 時的輸入電容(Ciss)(最大值):7.5pF @ 10V FET 功能:- 功率耗散(最大值):150mW(Ta) 不同?Id,Vgs 時的?Rds On(最大值):10.4 歐姆 @ 50mA,4V 工作溫度:150°C(TJ) 安裝類型:表面貼裝 供應商器件封裝:3-SSFP 封裝/外殼:SC-81 標準包裝:8,000
3LP01SS-TL-H 功能描述:MOSFET P-CH 30V 400MA SMCP RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
主站蜘蛛池模板: 夏津县| 偏关县| 甘泉县| 曲松县| 新乡县| 邻水| 西畴县| 尼玛县| 饶河县| 饶阳县| 博乐市| 衡阳市| 逊克县| 科技| 边坝县| 凌海市| 新河县| 桂阳县| 英吉沙县| 贵港市| 巴马| 平潭县| 阳东县| 永靖县| 进贤县| 雷州市| 衡南县| 隆昌县| 若尔盖县| 武功县| 富宁县| 扶沟县| 九江市| 吉安市| 高碑店市| 丘北县| 武宁县| 定边县| 临清市| 甘谷县| 扬中市|