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參數資料
| 型號： | 41LV16100B-60K |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100萬× 16（16兆）動態與江戶頁面模式內存 |
| 文件頁數： | 10/22頁 |
| 文件大小： | 152K |
| 代理商： | 41LV16100B-60K |
IS41LV16100B
18
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
04/13/05
ISSI
HIDDEN REFRESH CYCLE(1) (WE = HIGH; OE = LOW)
CBR
CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case,
WE = LOW and OE = HIGH.
2. tOFF is referenced from rising edge of
RAS or CAS, whichever occurs last.
tRAS
tRP
I/O
UCAS/LCAS
RAS
Open
tCP
tRPC
tCSR
tCHR
tRPC
tCSR
tCHR
tRAS
tRP
UCAS/LCAS
RAS
tCRP
tRCD
tRSH
tCHR
tAR
tASC
tRAD
ADDRESS
Row
Column
tRAH
tASR
tRAL
tCAH
I/O
Open
Valid Data
tAA
tCAC
tRAC
tCLZ
tOFF(2)
OE
tOE
tORD
tOD
Don’t Care
Undefined
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| 41LV16100B-60TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 41LV16100B-60KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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