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參數資料
| 型號： | 41LV16100B-60K |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100萬× 16（16兆）動態與江戶頁面模式內存 |
| 文件頁數： | 13/22頁 |
| 文件大小： | 152K |
| 代理商： | 41LV16100B-60K |
PACKAGING INFORMATION
ISSI
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/29/03
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice.
ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
400-mil Plastic SOJ
Package Code: K
Notes:
1. Controlling dimension:
millimeters.
2. BSC = Basic lead spacing
between centers.
3. Dimensions D and E1 do not
include mold flash protrusions
and should be measured from
the bottom of the package.
4. Reference document: JEDEC
MS-027.
SEATING PLANE
1
N
E1
D
E2
E
B
e
A1
A
C
A2
b
N/2+1
N/2
Millimeters
Inches
Millimeters
Inches
Millimeters
Inches
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
No. Leads (N)
28
32
36
A
3.25
3.75
0.128
0.148
3.25
3.75
0.128 0.148
3.25
3.75
0.128 0.148
A1
0.64
—
0.025
—
0.64
—
0.025
—
0.64
—
0.025
—
A2
2.08
—
0.082
—
2.08
—
0.082
—
2.08
—
0.082
—
B
0.38
0.51
0.015
0.020
0.38
0.51
0.015 0.020
0.38
0.51
0.015 0.020
b
0.66
0.81
0.026
0.032
0.66
0.81
0.026 0.032
0.66
0.81
0.026 0.032
C
0.18
0.33
0.007
0.013
0.18
0.33
0.007 0.013
0.18
0.33
0.007 0.013
D
18.29 18.54
0.720
0.730
20.82
21.08
0.820 0.830
23.37 23.62
0.920 0.930
E
11.05 11.30
0.435
0.445
11.05
11.30
0.435 0.445
11.05 11.30
0.435 0.445
E1
10.03 10.29
0.395
0.405
10.03
10.29
0.395 0.405
10.03 10.29
0.395 0.405
E2
9.40 BSC
0.370 BSC
9.40 BSC
0.370 BSC
9.40 BSC
0.370 BSC
e
1.27 BSC
0.050 BSC
1.27 BSC
0.050 BSC
1.27 BSC
0.050 BSC
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| 41LV16100B-60TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 41LV16100B-60KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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